1. Simplified diagram of the LMG5200 GaN FET power stage. The LMG5200 is a complete, reliable power stage, consisting of a performance optimized driver and power GaN FET. All devices are mounted on a ...
The MSK3003 is a 3-phase bridge MOSFET power module that employs space efficient isolated ceramic tab power SIP package. This device interfaces directly with most brushless motor drive IC’s without ...
Infineon Technologies AG has introduced its automotive-qualified EasyPACK 2B EDT2 half-bridge power module, optimized for inverter applications in hybrid and electric vehicles. The 750-V device can ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an industry standard 62 mm housing. Powered by Cree's C2MT large area SiC chip technology, the half-bridge module exhibits an 8 ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...