A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...
In the realm of electronic devices, particularly in the domain of memory devices, significant research has centered around non-volatile floating gate transistors. These transistors are explored as ...
Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...
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