SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...

A power MOSFET is almost invariably used in today's high-frequency power converter applications being a voltage controlled, fast switching and majority-carrier device. However, MOSFET's major ...

A power device could change how high voltage systems are designed by simplifying architectures, reducing cost and replacing existing approaches.

MOSFET selection for DC-to-DC switching controllers can be a complicated process. It is not sufficient to merely look at the voltage and current ratings for a MOSFET. A balance between low gate charge ...

For example, if a MOSFET in an SO8 package (θ JD = 15°C/W) dissipates a P j of 1 W and must maintain a junction temperature below 125°C, then the measured drain temperature must not exceed 110°C ...

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPD7107F,” a gate driver switch IPD [1] that controls the conduction and shut-off of current supplied ...

Mission critical servers and communications equipment must continue to operate, even as circuit boards and cards are plugged-in or pulled-out for maintenance and capacity adjustment. Hot swap ...

Toshiba Electronics Europe has extended its TPCx series of 30V power mosfets with the introduction of 9 new devices. Said to combine high speed switching, high current ratings and a compact package ...

The Forward and Flyback converters are two popular topologies widely used in isolated DC-DC power converters. These topologies are favored by designers for their simplicity, ability to handle multiple ...