The SCT2120AF is a new addition to ROHM Semiconductor’s series of SiC Power Devices. The SCT2120AF is an N-channel SiC power MOSFET that has a drain-source voltage of 650 V and a low on-state ...
(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
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