Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...
PCIM Europe, an international exhibition and conference for power electronics and its applications, hosted 515 exhibitors, 300 tutorials and workshops, and 107 forum presentations at this week’s show ...
GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...
In 2008, the commercialization of the silicon carbide (SiC) MOSFET marked a major turning point for the power semiconductor market, representing its first significant development in decades. This ...
Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and ...
Check out our PCIM 2022 coverage. Power Integrations announced its new SCALE EV family of gate-driver boards for Infineon EconoDUAL modules at PCIM. Suitable for original, clone, and silicon-carbide ...
All questions and answers are based on the 2017 NEC. Q. Per the NEC, overcurrent protection devices must be placed at what location in branch-circuit or feeder conductors? A. Except as permitted by ...
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