Combining GaN transistors with silicon-based digital circuits enables complex computing functions built directly into power ...
Power electronics in the Industry 4.0 era are evolving to deliver higher efficiency and power density and simplify power design.
The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...
High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...
A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...
Volume production has commenced for Efficient Power Conversion’s (EPC) EPC2366, the first of its seventh-generation (Gen 7) eGaN family of power transistors. Devices produced on the new process ...
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CAMBRIDGE, MA – Silicon transistors, which are used to amplify and switch signals, are a critical component in most electronic devices, from smartphones to automobiles. But silicon semiconductor ...
Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...
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