Microsemi Corporation announced its 1011GN-700ELM, the first in a family of radio frequency (RF) transistors for high-power air traffic control (ATC), secondary surveillance radio (SSR) applications.
The MRF6VP3450H 50-V laterally diffused MOS (LDMOS) RF power transistor is offered as providing 50% higher output power than competing UHF TV broadcast solutions and demonstrates an industry-leading ...
Freescale Semiconductor, supplier of high-power radio-frequency (RF) power transistors for 2.5G and 3G wireless base-station amplifiers, has shipped more than 10 million high-power, high-frequency RF ...
Based on Silicon-Germanium Carbon (SiGe:C) process technology, the BFP740 HBT family of RF transistors targets a wide range of RF and wireless applications, such as wireless LANs. The transistors, ...
A new technical paper titled “Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure” was published by researchers at Purdue University and won the 2022 Device ...
NXP has introduced new RF power transistors designed for smart industrial applications, featuring 65 V laterally diffused metal oxide semiconductor(LDMOS) silicon ...
NXP’s MRF1K50H is a 1,500W LDMOS transistor, following on from the 1,250W MRFE6VP61K25H. 1.5kW continuous wave is available at 50V, and the device works over 1.8–500MHz. The transistor is ...
CARLSBAD, Calif.--(BUSINESS WIRE)--MaxLinear Inc. (NASDAQ: MXL) and RFHIC (KOSDAQ: 218410) today announced a collaboration to deliver a production-ready 400MHz Power Amplifier (PA) solution for 5G ...
Benchmarking the output power (P out) as a function of frequency for GaN-on-silicon. To the best of the authors’ knowledge, ...
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