EDN

SOI emerges as bulk-CMOS alternative

For CMOS logic, SOI (silicon-on-insulator) technology offers significant advantages over bulk silicon at the same geometry. Manufacturers have demonstrated those advantages using device-level ...
EDN

X-FAB Rolls Out Trench-Isolated SOI CMOS Process

To reduce die size by up to 40 percent, Erfurt, Germany-based analog/mixed-signal foundry X-FAB Semiconductor Foundries AG Tuesday announced XT06, its 0.6-micrometer silicon-on-insulator (SOI) CMOS ...
Business Wire

TowerJazz Releases Enhanced RF SOI CMOS and High Speed SiGe Process Design Kits for Use with Agilent Technologies’ Advanced Design System Software

NEWPORT BEACH, Calif.--(BUSINESS WIRE)--TowerJazz, the global specialty foundry leader, today announced the availability of enhanced RF SOI CMOS and high speed SiGe process design kits (PDKs) for its ...
Electronic Design

10-Gb PHY Transceiver Built Using SOI-CMOS Technology

Debuting as the market’s first 10-Gb Ethernet physical-layer large-scale integration (LAN-PHY LSI) transceiver designed using a combination of silicon-on-insulator and complementary metal-oxide ...
Yahoo Finance

QuantalRF Launches Groundbreaking 5-7 GHz Wi-Fi 7 Front-End IC in CMOS SOI

ZÜRICH, Switzerland, April 04, 2024 (GLOBE NEWSWIRE) -- QuantalRF, the pioneering developer of RF semiconductor and antenna solutions, is proud to announce the launch of its innovative QWX27105 single ...
Semiconductor Engineering

CMOS And SOI Invade RF Front End

The next-generation 4G wireless standard known as long-term evolution (LTE) presents some new and difficult design choices for OEMs. One of the more difficult choices involves the less glamorous, but ...
Dataquest

R&D advances for FAMES Pilot Line: 400 °C CMOS breakthrough opens critical doors to 3D integration goals

CEA-Leti, the coordinator of the FAMES Pilot line, has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400°C. The devices match ...
Yahoo

STMicroelectronics in Cooperation With Soitec Makes 28nm FD-SOI CMOS Process Available Through CMP

GENEVA and GRENOBLE, FRANCE--(Marketwire - Oct 18, 2012) - STMicroelectronics (NYSE: STM), Soitec (Euronext) and CMP (Circuits Multi Projets®) today announced that ST's CMOS 28nm Fully Depleted ...
Electronics Weekly

Renesas claims faster, lower power SOI CMOS

Renesas claims faster, lower power SOI CMOSNews from ElectronicNews OnlineJapanese memory chipmaker Renesas Technology said it has developed silicon-on-insulator (SOI) CMOS device technology that is ...
Semiconductor Engineering

40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors

“This paper presents a 40 GHz voltage-controlled oscillator (VCO) and frequency divider chain fabricated in STMicroelectronics 28 nm ultrathin body and box (UTBB) fully depleted silicon-on-insulator ...
Yahoo Finance

STMicroelectronics Makes Analog 130nm H9A CMOS Process Available Through CMP

ROUSSET, FRANCE and GRENOBLE, FRANCE--(Marketwire - Mar 7, 2013) - STMicroelectronics (NYSE: STM) and CMP (Circuits Multi Projets®) today announced that ST's H9A CMOS process (at 130nm lithography ...