A new technical paper titled “Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures” was published by researchers at University of Stuttgart, IIT Kanpur, National Yang Ming Chiao ...
Selecting the best memory solution in terms of system performance often means designers must trade memory density versus performance. As today's processors continue to speed up, main memory grows ...
Toshiba Corporation today announced that it has developed an eXtremely Low Leakage 65nm SRAM (XLL SRAM) suitable for back-up RAM in low power MCU that achieves a fast wake-up time from a deep sleep ...
IBM today announced it has built a critical component for a high-speed computer memory that is about ten times smaller than those currently available, potentially enabling a major system performance ...
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