Epitaxial wafer supplier IQE plc said Thursday its newly developed UltraSmooth strained silicon technology has demonstrated speed improvements for both nMOS and pMOS devices below 0.10 microns. IQE ...
Leuven, Belgium-based nanoelectronics and nanotechnology research center IMEC is detailing high-performance germanium (Ge) pMOS devices using a silicon (Si) compatible process flow at the IEEE ...
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