Martin followed up the MTJ announcement with Christian Kurzke, project lead for MTJ and a developer tools architect at Motorola, and found out what's new and different about MTJ, as well as how to get ...

Professor Tetsuo Endoh, leading a group of researchers at Tohoku University, has announced the development of an MTJ (Magnetic Tunnel Junction) with 10 ns high-speed write operation, sufficient ...

The National Institute for Materials Science (NIMS) has achieved a tunnel magnetoresistance (TMR) ratio of 631% at room temperature, breaking the previous world record which had stood for 15 years.

Editor’s note: This work was first presented at the 2011 IEEE International Electron Devices Meeting (IEDM) and appears here courtesy of the IEEE. For more information about IEDM 2012 (San Francisco, ...

Embedded Flash memory technology is limited by scaling difficulties in Flash below 28nm CMOS processes. The discovery, and later the industrial manufacturing of Spin-Transfer-Torque (STT) MRAMs, ...

A technical paper titled “Stochastic domain wall-magnetic tunnel junction artificial neurons for noise-resilient spiking neural networks” was published by researchers at University of Texas at Austin.